MMH3111NT1【PDF 1/16 页】TRANS GAAS HFET SOT-89

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Freescale Semiconductor

Technical Data

Heterostructure Field Effect

Transistor (GaAs HFET)

Broadband High Linearity Amplifier

The MMH3111NT1 is a General Purpose Amplifier that is internally

input and output prematched. It is designed for a broad range of Class A,

small--signal, high linearity, general purpose applications. It is suitable

for applications with frequencies from 250 to 4000 MHz such as Cellular,

PCS, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.

Features

? Frequency: 250 to 4000 MHz

? P1dB: 22.5 dBm @ 900 MHz

? Small--Signal Gain: 12 dB @ 900 MHz

? Third Order Output Intercept Point: 44 dBm @ 900 MHz

? Single 5 Volt Supply

? Internally Prematched to 50 Ohms

? Internally Biased

? Cost--effective SOT--89 Surface Mount Package

? In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel.

Document Number: MMH3111NT1

Rev. 4, 9/2012

MMH3111NT1

250--4000 MHz, 12 dB

22.5 dBm

GaAs HFET

CASE 2142--01

SOT--89

PLASTIC

Table 1. Typical Performance (1)

Table 2. Maximum Ratings

Characteristic

Small--Signal Gain

(S21)

Input Return Loss

(S11)

Symbol

G p

IRL

900

MHz

--14

2140

MHz

11.3

--15

3500

MHz

--16

Unit

Rating

Supply Voltage

Supply Current

RF Input Power

Storage Temperature Range

Symbol

V DD

I DD

P in

T stg

Value

300

--65 to +150

Unit

dBm

° C

Output Return Loss

ORL

--14

--19

--14

Junction Temperature

(2)

T J

150

° C

(S22)

2. For reliable operation, the junction temperature should not

Power Output @1dB

P1dB

22.5

dBm

exceed 150 ° C.

Compression

Third Order Output

OIP3

dBm

Intercept Point

1. V DD = 5 Vdc, T A = 25 ° C, 50 ohm system, application circuit tuned

for specified frequency.

Table 3. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Case Temperature 95 ° C, 5 Vdc, 150 mA, no RF applied

Symbol

R θ JC

Value (3)

37.5

Unit

° C/W

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf .

Select Documentation/Application Notes -- AN1955.

RF Device Data

Freescale Semiconductor, Inc.

MMH3111NT1

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